[A-0-1]Circuit Simulation of Three-Dimensional Device in Beam-Recrystallized Polysilicon Films
James F. Gibbons, Martin D. Giles, James C. Sturm, James T. Walker(1.Stanford Electronics Laboratory, Stanford University)
1983 Conference on Solid State Devices and Materials
Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
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1983 Conference on Solid State Devices and Materials
Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(110)
[A-0-2]Evolution of New Device Concepts in Quantum-Well and Superlattice Structures
Hiroyuki Sakaki(1.Institute of Industrial Science, University of Tokyo)
[A-1-1]Silicon Molecular Beam Epitaxy
Yasuhiro SHIRAKI(1.Central Research Laboratory, Hitachi, Ltd.)
[A-1-2]Study on Formation of Solid-Phase-Epitaxial CoSi2, Films and Patterning Effects
Kouichirou Ishibashi, Hiroshi Ishiwara, Seijiro Furukawa(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
[A-1-3]Ultra-Smooth Heteroepitaxial NiSi2, Films on Silicon Grown by Molecular Beam Epitaxy
A. Ishizaka, Y. Shiraki, K. Nakagawa, E. Maruyama(1.Central Research Laboratory, Hitachi, Ltd.)
[A-1-4]Fraction of Interstitialcy Mechanism in Impurity Diffusion in Silicon
Satoru Matsumoto, Yutaka Ishikawa, Tatsuya Niimi(1.Department of Electrical Engineering, Keio University, 2.Department of Applied Physics, Tokai University)
[A-2-1]Laser Recrystallized SOI
M. Tamura, M. Ohkura, N. Natsuaki, M. Miyao, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-2]Crystallinity of Recrystallized Si on SiO2, by Zone Melting Method
Kohei Higuchi, Shuichi Saitoh, Hidekazu Okabayashi(1.Microelectronics Research Labs., NEC Corporation)
[A-2-3]Formation of Si Epi./MgO･Al2O3 Epi./SiO2/Si and Its Epitaxial Film Quality
Masao Mikami, Yasuaki Hokari, Koji Egami, Hideki Tsuya, Masaru Kanamori(1.Fundamental Research Laboratories and Microelectronics Laboratories, NEC Corporation)
[A-2-4]Recrystallization of Polycrystalline Silicon Islands on Fused Silica
Yutaka Kobayashi, Akira Fukami, Takaya Suzuki(1.Hitachi Research Laboratory, Hitachi, Limited)
[A-2-5]Characterization of Laser Recrystallized SOI
S. Nakashima(1.Department of Applied Physics, Osaka University)
[A-2-6]Effects of Encapsulation Layers on Planarization of Laser Recrystallized SOI Layers
M. Ohkura, K. Kusukawa, I. Yoshida, M. Miyao, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-7]Rapid Annealing of a Polysilicon Stacked Emitter Structure
N. Natsuaki, M. Tamura, T. Miyazaki, Y. Yanagi(1.Central Research Laboratory, Hitachi Ltd.)
[B-1-1]GaAs-AlGaAs Superlattice Grown by MBE
H. OKAMOTO, Y. HORIKOSHI, H. IWAMURA(1.Musashino Electrical Communication Laboratory, N.T.T.)
[B-1-2]The Growth of an InGaAs-InP Superlattice by the Chloride VPE
J. Komeno, K. Kodama, M. Takikawa, M. Ozeki(1.Fujitsu Laboratories Ltd.)
[B-2-1]GaAs Digital Integrated Circuits
Masamichi Ohmori(1.Atsugi Electrical Communication Laboratory, NTT)
[B-2-2]A 4x4 Bit Parallel Multiplier with GaAs JFET DCFL
Y. Kato, J. Kasahara, M. Wada, K. Taira, M. Dohsen, M. Arai, K. Gonoi, M. Sato, T. Hashimoto, N. Watanabe(1.Sony Corporation Research Center, 2.Sony Corporation Semiconductor Group)
[B-2-3]Sidewall-Assisted Closely Spaced Electrode Technology for High Speed GaAs LSIs
Asamitsu Higashisaka, Masaoki Ishikawa, Fumiaki Katano, Shuji Asai, Takashi Furutsuka, Yoichiro Takayama(1.Microelectronics Research Laboratories, NEC Corporation)
[B-2-4]A New GaAs MESFET with a Selectively Recessed Gate Structure
Issey OHTA, Tatsuo OTSUKI, Masaru KAZUMURA, Gota KANO(1.Semiconductor Laboratory, Matsushita Electronics Corporation)
[B-2-5]Device Model for Ion-Implanted GaAs MESFET Including Compensation Mechanism of SI Substrate
M. OGAWA, T. KAMIYA(1.Department of Electronic Engineering, University of Tokyo)
[B-2-6]Characterization of a New Gate Insulator BN on InP Grown by Low-Temperature CVD
Eiich Yamaguchi, Makoto Minakata(1.Musashino Electrical Comnunication Laboratory, NTT)
[B-2-7]Some Aspects of Research and Development in III-V Semiconductors in British Industry and Universities
P. N. Robson(1.Department of Electronic and Electrical Engineering, The University of Sheffield)
[A-3-1]Recent Progress in SOI Technology
Hon Wai Lam(1.Texas Instruments Incorporated)
[A-3-2]Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy
Hiroshi Yamamoto, Hiroshi Ishiwara, Seijiro Furukawa, Masao Tamura, Takashi Tokuyama(1.Department of Applied Electronics, Tokyo Institute of Technology, 2.Central Research Laboratroy, Hitachi Ltd.)
[A-3-3]Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing
Tomoyasu Inoue, Kenji Shibata, Koichi Kato, Yuichi Mikata, Masahiro Kashiwagi(1.Toshiba Research and Development Center, 2.Toshiba Semiconductor Device Engineering Laboratory, 3.Toshiba Corporation)
[A-3-4]E-Beam Recrystallized SOI
Hiroshi Ishiwara(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
[A-3-5]Silicon Film Recrystallization by Line Electron Beam
S. Saitoh, H. Okabayashi, K. Higuchi(1.Microelectronics Research Labs., NEC Corporation)
[A-3-6]Characterization of 0.1 μm Thick Isolated Silicon Layers on Porous Oxidized Silicon
Kazuo Imai, Hideyuki Unno(1.Atsugi Electrical Communication Laboratory, NTT)
[A-4-1]Microelectronic Thin Film Deposition by UV Laser Photolysis
P. K. Boyer, C. A. Moore, R. Solanki, W. K. Ritchie, G. J. Collins(1.Department of Electrical Engineering Colorado State University)
[A-4-2]Photo-CVD Silicon Nitride and Silicon Oxide Films for VLSI Application
M. Hatanaka, H. Ito, H. Abe, H. Nakata(1.LSI R&D Laboratory, Mitsubishi Electric Corporation)
[A-4-3]Low Temperature Growth of Silicon Dioxide by Direct Photochemical Reaction of Si2H6 and O2
Y. Mishima, Y. Ashida, M. Hirose, Y. Osaka(1.Department of Electrical Engineering, Hiroshima University, 2.Corporate Development Department, Mitsui Toatsu Chemicals, Inc.)
[A-4-4]UV Resist-Stripping for High-Speed and Damage-Free Process
Kiyoshi Ozawa, Takashi Ito, Hajime Ishikawa(1.FUJITSU LABORATORIES LTD., ATSUGI)
[A-4-5]RCJI Decoder for Josephson Memory
Y. Wada, M. Hidaka, I. Ishida(1.Microelectronics Research Labs., NEC Corporation)
[A-4-6]A 35ps Ripple Carry Josephson Adder with Latch Using High Gain Direct Coupled Logic Gates
Masami Tokumitsu, Shuichi Fujita, Masaru Okada, Kohji Hohkawa, Akira Ishida(1.Atsugi Electrical Communication Laboratory, N.T.T.)
[A-4-7]Josephson Cell Array Circuit Using Four Junction Logic (4 JL) Gates
Hiroshi NAKAGAWA, Hideo OHIGASHI, Itaru KUROSAWA, Eiichi SOGAWA, Susumu TAKADA, Hisao HAYAKAWA(1.Electrotechnicaｌ Laboratory)
[A-4-8]Switching-Time Measurements on Josephson Variable Threshold Logic Gate
Norio Fujimaki, Shinya Hasuo, Toyoshi Yamaoka(1.Fujitsu Ltd.)
[B-3-1]Substrate Materials for GaAs Integrated Circuits
C. G. Kirkpatrick, R. T. Chen, D. E. Holmes, K. R. Elliott, P. M. Asbeck(1.Rockwell International Microelectronics Research and Development Center)
[B-3-2]Deep Level Characterization in LEC GaAs
T. Ikoma, M. Taniguchi, H. Noge(1.Institute of Industrial Science, University of Tokyo)
[B-3-3]Growth and Electrical Properties of Gallium Arsenide Single Crystal by Magnetic Field Applied LEC Technique
T. Fukuda, K. Terashima, T. Katsumata, F. Orito, T. Kikuta(1.Optoelectronics Joint Research Laboratory)
[B-3-4]Influence of Growth Conditions and Alloy Composition on Deep Electron Traps of MBE Grown n-AlGaAs
K. Yamanaka, S. Naritsuka, M. Mannoh, K. Shinozaki, T. Yuasa, Y. Nomura, M. Mihara, M. Ishii(1.Optoelectronics Joint Research Laboratory)
[B-3-5]Growth and Characterization of Low Dislocation Large GaP Single Crystals
M. Watanabe, T. Fujii, J. Ushizawa, S. Washizuka(1.Toshiba Research and Development Center)
[B-3-6]Formation and Thermal Stability of Au-GaAs(001) Interfaces Studied by Angle Resolved XPS and Rutherford Backscattering
K. L. I. Kobayashi, N. Watanabe, T. Narusawa, H. Nakashima(1.Optoelectronics Joint Research Laboratory)
[B-3-7]LEC Growth of InAsxP1-x Bulk Crystals
Hisatsune Watanabe, Hisao Watanabe, Masaji Yoshida, Junji Matsui(1.Fundamental Research Laboratories, NEC Conporation)
[B-3-8]Raman Scattering Measurement of the Free-Carrier Concentration in AlxGa1-xAs
T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii(1.Optoelectronics Joint Research Laboratory)
[B-3-9]Local Modes from Si at Gallium and Arsenic Sites and Electrical Activation in Implanted GaAs
T. Nakamura, T. Katoda(1.Institute of Interdisciplinary Research Faculty of Engineering, The University of Tokyo)
[B-4-1]Organic Monomolecular Films and Their Applications
Michio Sugi(1.Electrotechnical Laboratory)
[B-4-2]Electrical Properties of n--p Amorphous-Crystalline Silicon Heterojunctions
Hideharu Matsuura, Tetsuhiro Okuno, Hideyo Okushi, Nobuhiro Hata, Satoshi Yamasaki, Hidetoshi Oheda, Akihisa Matsuda, Kazunobu Tanaka(1.Electrotechnical Laboratory)
[B-4-3]a-Si Solar Cells Having More Than 9％ Conversion Efficiency
Koji Okuda, Koha Fujimoto, Yoshio Kashima, Hiroaki Okamoto, Yoshihiro Hamakawa(1.Faculty of Engineering Science, Osaka University)
[B-4-4]High-Rate Deposition of a-Si:H Using SiH4
T. Hamasaki, M. Ueda, M. Hirose, Y. Osaka(1.Department of Electrical Engineering, Hiroshima University)
[B-4-5]a-Si:H MIS Position Sensitive Detectors
Satoshi Arimoto, Hidekazu Yamamoto, Hideo Ohno, Hideki Hasegawa(1.Department of Electrical Engineering, Hokkaido University)
110 results ( 1 - 50 )
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