1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-3-3]Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing

Tomoyasu Inoue, Kenji Shibata, Koichi Kato, Yuichi Mikata, Masahiro Kashiwagi(1.Toshiba Research and Development Center, 2.Toshiba Semiconductor Device Engineering Laboratory, 3.Toshiba Corporation)
https://doi.org/10.7567/SSDM.1983.A-3-3
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