1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-2-4]A New GaAs MESFET with a Selectively Recessed Gate Structure

Issey OHTA, Tatsuo OTSUKI, Masaru KAZUMURA, Gota KANO(1.Semiconductor Laboratory, Matsushita Electronics Corporation)
https://doi.org/10.7567/SSDM.1983.B-2-4
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