International Conference on Solid State Devices and Materials
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1983 Conference on Solid State Devices and Materials
Aug 30
- Sep 1, 1983
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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1983 Conference on Solid State Devices and Materials
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1983 Conference on Solid State Devices and Materials
Aug 30
- Sep 1, 1983
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[B-2-5]
Device Model for Ion-Implanted GaAs MESFET Including Compensation Mechanism of SI Substrate
M. OGAWA, T. KAMIYA(1.Department of Electronic Engineering, University of Tokyo)
https://doi.org/10.7567/SSDM.1983.B-2-5
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