1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
Back
International Conference on Solid State Devices and Materials
1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-2-6]Characterization of a New Gate Insulator BN on InP Grown by Low-Temperature CVD

Eiich Yamaguchi, Makoto Minakata(1.Musashino Electrical Comnunication Laboratory, NTT)
https://doi.org/10.7567/SSDM.1983.B-2-6
Download PDFDownload PDF
Back