1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-3-3]Growth and Electrical Properties of Gallium Arsenide Single Crystal by Magnetic Field Applied LEC Technique

T. Fukuda, K. Terashima, T. Katsumata, F. Orito, T. Kikuta(1.Optoelectronics Joint Research Laboratory)
https://doi.org/10.7567/SSDM.1983.B-3-3
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