1984 International Conference on Solid State Devices and Materials
Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan
1984 International Conference on Solid State Devices and Materials
Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan
[B-1-2]Nearly-Dislocation-Free, Semi-Insulating GaAs Grown in B2O3 Encapsulant
Hideo Nakanishi, Hiroki Kohda, Kohji Yamada, Keigo Hoshikawa(1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
