International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan

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International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan

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You can search for presentations in this event.

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Search Results(210)

[A-0-1]Recent Progress in Low Temperature Photochemical Processes

Jun-ichi Nishizawa, Yoshihiro Kokubun(1.Research Institute of Electrical Communication, Tohoku University, 2.Research Development Corporation of Japan c/o Semiconductor Research Institute)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-0-2]Submicron Si Technology: Present, Future and Impacts on Electronic Age

M. P. Lepselter(1.AT & Bell Laboratories)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-1-1]Submicron Lithography Using Contrast Enhancement

B. F. Griffing, P. R. West(1.General Electric Company Corporate Research and Development)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-1-2]X-Ray Lithography Using Synchrotron Radiation

Koichiro Hoh(1.Electrotechnical Laboratory)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-2-1]Refractory Metals and Silicides for Si MOS VLSI's

S. Iwata(1.Central Research Lab., Hitachi, Ltd.)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-2-2]Nanometer E-Beam Lithography Using 2-Layer Resist System Composed of Silicone-Based Negative Resist (SNR)

Akio Sugita, Masao Morita, Toshiaki Tamamura(1.Ibaraki Electrical Communication Laboratory, NTT)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-2-3]A High Contrast Submicron X-Ray Mask with Ta Absorber Patterns

M. Sekimoto, A. Ozawa, T. Ohkubo, H. Yoshihara(1.Atsugi Electrical Communication Laboratory, N.T.T.)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-2-4]Fine Pattern Difinition with Focused Ion Beams and Its Application to X-Ray Mask Fabrication

Toshihiko KANAYAMA, Masanori KOMURO, Hiroshi HIROSHIMA, Tsunehiro OHIRA, Nobufumi ATODA, Hisao TANOUE, Toshio TSURUSHIMA(1.Electrotechnical Laboratory)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-2-5]Characteristics of Selective Deposition of Metal Organic Films Using Focused Ion Beams

Kenji Gamo, Nobuyuki Takakura, Daisuke Takehara, Susumu Namba(1.Department of Electrical Engineering Faculty of Engineering Science, Osaka University)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-2-6]Formation of SPE-CoSi2 Submicron Line by Lift Off Using Selective Reaction

Kouichirou Ishibashi, Seijiro Furukawa(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-3-1]Overgrowth and Characterization of Epitaxial Silicon on Patterned NiSi2 Grown by Molecular Beam Epitaxy

Akitoshi Ishizaka, Patricia A. Cullen, Yasuhiro Shiraki(1.Central Research Laboratory, Hitachi, Ltd.)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-3-2]Via-Hole Filling with Molybdenum by RF Bias Sputtering

T. Mogami, M. Morimoto, H. Okabayashi(1.Microelectronics Research Labs., NEC Corporation)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-3-3]Self-Aligned Titanium Silicidation by Lamp Annealing

K. Tsukamoto, T. Okamoto, M. Shimizu, T. Matsukawa, H. Harada(1.LSI R&D Lab., Mitsubishi Electric Corp.)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-3-4]Surface Morphology and Corrosion in Aluminum Alloy Thin Films

SHOJI MADOKORO, SHIRO HAGIWARA, SHINTARO USHIO(1.Electron Device Division, OKI Electric Industry Co., Ltd)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[A-3-5]Electromigration Studies of Al-Intermetallic Structures

P. S. Ho, T. Kwok, H. -C. W. Huang(1.IBM Thomas J. Watson Research Center, 2.IBM General Technology Division)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-1-1]Uniformity of In-Alloyed LEC GaAs

H. Kimura, C. B. Afable, H. M. Olsen, A. T. Hunter, K. T. Miller, H. V. Winston(1.Hughes Research Laboratories)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-1-2]Nearly-Dislocation-Free, Semi-Insulating GaAs Grown in B2O3 Encapsulant

Hideo Nakanishi, Hiroki Kohda, Kohji Yamada, Keigo Hoshikawa(1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-1-3]Homogeneity Improvement of LEC-Grown, Semi-Insulating GaAs by Heat-Treatment

Shintaro MIYAZAWA, Takashi HONDA, Kazuo WATANABE(1.Atsugi Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-2-1]High Field Transport and Advanced Modeling Techniques for Submicron Devices

Eugene CONSTANT(1.CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS, LA CNRS N° 287 GRECO MICROONDE N° 11, UNIVERSITE DE LILLE I. Bat P3)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-2-2]Very Short Channel MOSFET's-Physics and Technology

W. Fichtner(1.AT & T Bell Laboratories)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-2-3]Properties of Submicron Silicon MOSFET's from 300K to 4.2K*

Perry J. Robertson, David J. Dumin(1.Clemson University)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-2-4]Expectable Performances of Future NMOS and CMOS Technologies

J. GAUTIER, B. GIFFARD, R. KLEIN, M. GUERIN, G. GUEGAN(1.LETI - IRDI - Commissariat a l'Energie Atomique)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-2-5]Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon

Shoji SHUKURI, Yasuo WADA, Masao TAMURA, Hiroo MASUDA, Tohru ISHITANI(1.Central Research Laboratory, Hitachi Ltd.)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-3-1]Short-Term and Long-Term Reliability of Nitrided Oxide MISFET's

Toru KAGA, Takahisa KUSAKA, Takaaki HAGIWARA, Yuji YATSUDA, Kiichiro MUKAI(1.CENTRAL RESEARCH LABORATORY, HITACHI Ltd.)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-3-2]Interface-Trap Generation Modeling of Fowler-Nordheim Tunnel Injection into Ultrathin Gate Oxide

S. Horiguchi, T. Kobayashi, K. Saito(1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-3-3]MOS Structure Undergoing F.N. Tunnel Injection Aging

B. BALLAND, C. PLOSSU, P. PINARD, J. BOREL(1.Laboratoire de Physique de la Matiere (Laboratoire associe au CNRS), 2.E.F.C.I.S.)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-3-4]Influence of High Electric Field Capture and Emission of a Deep-Level Center in VLSI Device Structures

G. P. Li, Y. Wu, M. Chang, K. L. Wang(1.Electrical Engineering Department University of California)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[B-3-5]Enhanced Impurity Redistribution for Silicided Source/Drain

Masakazu KAKUMU, Kazuhiko HASHIMOTO, Yoshio NISHI(1.Semiconductor Device Engineering Laboratory TOSHIBA Corporation)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-1-1]Monolithic Integration of GaAs and Si

John C. C. Fan(1.Lincoln Laboratory, Massachusetts Institute of Technology)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-1-2]Focused Ion Implantation for Optoelectronic Integrated Circuits

Hisao Hashimoto, Eizo Miyauchi(1.Optoelectronics Joint Research Laboratory)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-2-1]Laser Oscillations from the Internal Levels of an Impurity in a Semiconductor

P. B. Klein(1.U.S. Naval Research Laboratory)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-2-2]Monolithic Integration of InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors

Jun Shibata, Yoichi Sasai, Ichiro Nakao, Soichi Kimura, Nobuyasu Hase, Hiroyuki Serizawa(1.Central Research Laboratory Matsushita Electric Industrial Co., Ltd.)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-2-3]GaInAsP/InP Surface Emitting Laser with Two Active Layers

Y. Kotaki, S. Uchiyama, K. Iga(1.Tokyo Institute of Technology)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-2-4]Lasing Characteristics and Structure of Distributed Feedback Surface Emitting Laser Diode with AlxGa1-xAs/GaAs Multilayered Heterostructure

Mutsuo OGURA, Takafumi YAO(1.Electrotechnical Laboratory)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-2-5]Beam-Scannable Light Source with the Grating Output Coupler

Yasuo Kan, Ikuo Suemune, Masamichi Yamanishi(1.Faculty of Engineering, Hiroshima University)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-3-1]Extremely High-Quality GaAs-AlGaAs GRIN-SCH Lasers with a Superlattice Buffer Layer Grown by MBE for OEIC Applications

T. Fujii, S. Yamakoshi, O. Wada, S. Hiyamizu(1.Fujitsu Limited)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-3-2]High-Power Operation of Index-Guided Visible GaAs/GaAlAs Multiquantum-Well Lasers

K. Uomi, S. Nakatsuka, T. Ohtoshi, Y. Ono, N. Chinone, T. Kajimura(1.Central Research Laboratory, HITACHI Ltd.)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-3-3]A New Transverse-Mode Stabilized GaAlAs Laser with a Slab-Coupled Waveguide Grown by MOCVD

M. Okajima, Y. Watanabe, Y. Muto, M. Yamamoto, N. Motegi(1.Toshiba Research & Development Center, Toshiba Corporation)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-3-4]A Comparison of C3 and Novel Passive Cavity Single Frequency Lasers Operating at 1.55 Micron

R Plastow, A C Carter, P J Williams(1.Plessey Research (Caswell) Ltd Allen Clark Research Centre)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[C-3-5]Dependence of Threshold Current on Wavelength and Temperature in 1.3-μm GaInAsP/InP DFB Lasers

Y. Uematsu, H. Okuda, Y. Hirayama, H. Furuyama(1.Toshiba Research & Development Center, Toshiba Corporation)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-2-1]X-Ray Diffraction Analysis of Stoichiometry of GaAs Crystals

Isao Fujimoto(1.Broadcasting Science Research Laboratories of NHK)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-2-2]Deep Levels Due to Induced Dislocations in Vapor Phase Epitaxial GaAs

Fumio HASEGAWA, Norio YAMAMOTO, Yasuo NANNICHI(1.Institute of Material Science, University of Tsukuba)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-2-3]Correlation between Dominant Deep PL Bands and Fermi Level in Undoped LEC SI-GaAs

Toshio KIKUTA, Haruo EMORI, Tsuguo FUKUDA, Koichi ISHIDA(1.Optoelectronics Joint Research Laboratory)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-2-4]Characterization of Residual Stress in Semi-Insulating GaAs:Cr by Photoluminescence Method

Y. FUJIWARA, A. KOJIMA, T. NISHINO, Y. HAMAKAWA, K. YASUTAKA, M. UMENO, H. KAWABE(1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, 2.Department of Precision Engineering, Faculty of Engineering, Osaka University)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-2-5]C-V Profiling Studies on MBE-Grown GaAs/AlGaAs Heterojunction Interface

Miyoko O. Watanabe, Jiro Yoshida, Masao Mashita, Takatosi Nakanisi, Akimichi Hojo(1.Toshiba Research and Development Center)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-3-1]Raman Spectroscopy for Characterization of Smiconductor Materials and Surfaces

Takashi Katoda(1.Institute of Interdisciplinary Research Faculty of Engineering The University of Tokyo)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-3-2]Schottky Characteristics and Interfacial Defects in Tungsten Silicide/GaAs and Palladium/GaAs Systems

T. Makimoto, M. Taniguchi, K. Ogiwara, T. Ikoma, T. Okumura(1.Institute of Industrial Science, University of Tokyo, 2.Tokyo Metropolitan University)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-3-3]Electrical Properties of Surface Defects on Molecular Beam Epitaxially Grown GaAs Layers and Defect Free Growth Procedures

Masanori Shinohara, Tomonori Ito, Kazumi Wada, Yoshihiro Imamura(1.Atsugi Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-3-4]Initial Oxidation Stage of AlxGa1-xAs and (Al, Ga)0.5In0.5P Surfaces Studied by Photoemission Spectroscopy

Toshitaka TORIKAI, Masaki OGAWA(1.Opto-Electronics Research Laboratories, Fundamental Research, 2.Laboratories, NEC Corporation)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

[D-3-5]Compositional Inhomogeneity of InGaAsP/GaAs LPE Layer by Precision X-Ray Diffractometry

Kazumasa Hiramatsu, Kazuyoshi Tomita, Nobuhiko Sawaki, Isamu Akasaki(1.Department of Electronics, School of Engineering Nagoya University)

1984 International Conference on Solid State Devices and MaterialsTue. Sep 18, 1984

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