1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan

[B-2-3]Properties of Submicron Silicon MOSFET's from 300K to 4.2K*

Perry J. Robertson, David J. Dumin(1.Clemson University)
https://doi.org/10.7567/SSDM.1984.B-2-3
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