1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan

[C-3-5]Dependence of Threshold Current on Wavelength and Temperature in 1.3-μm GaInAsP/InP DFB Lasers

Y. Uematsu, H. Okuda, Y. Hirayama, H. Furuyama(1.Toshiba Research & Development Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1984.C-3-5
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