1984 International Conference on Solid State Devices and Materials
Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan
1984 International Conference on Solid State Devices and Materials
Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan
[D-2-4]Characterization of Residual Stress in Semi-Insulating GaAs:Cr by Photoluminescence Method
Y. FUJIWARA, A. KOJIMA, T. NISHINO, Y. HAMAKAWA, K. YASUTAKA, M. UMENO, H. KAWABE(1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, 2.Department of Precision Engineering, Faculty of Engineering, Osaka University)
