1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
1984 International Conference on Solid State Devices and Materials

1984 International Conference on Solid State Devices and Materials

Aug 30 - Sep 1, 1984International Conference Center Kobe, Kobe, Japan

[LD-1-4]Production of Single Crystalline Cubic-SiC with 2-inch Diameter by CVD and Characteristics of MOS Diodes

Shigehiro Nishino, Kentaro Shibahara, Shinichi Dohmae, Hiroyuki Matsunami(1.Department of Electrical Engineering, Kyoto University)
https://doi.org/10.7567/SSDM.1984.LD-1-4
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