1985 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1985Nippon Toshi Center, Tokyo, Japan
1985 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1985Nippon Toshi Center, Tokyo, Japan
[A-2-5]Effect of Grain Boundaries on the I-V Characteristics of P-Channel MOSFET/SOI
T. Nishimura, K. Sugahara, S. Kusunoki, Y. Akasaka(1.LSI Research and Development Laboratory Mitsubishi Electric Corporation)
