[A-0-1]Use of Synchrotron Radiation for Solid-State Devices and Materials Study
Jun-ichi Chikawa(1.National Laboratory for High Energy Physics)
1985 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1985Nippon Toshi Center, Tokyo, Japan
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1985 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1985Nippon Toshi Center, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(129)
[A-0-2]New Approaches to Device Simulation for Submicron Structures
Jeffrey Frey(1.University of Tokyo, Institute of Industrial Science)
[A-0-3]Quantum Physics of 2D Electrons in Semiconductor Interfaces
S. Kawaji(1.Department of Physics, Gakushuin University)
[A-0-4]Van der Waals Epitaxy -A New Method to Prepare Ultrathin Heterostructures-
Atsushi Koma(1.Institute of Materials Science, University of Tsukuba)
[A-1-1]High Field Drift Velocity Measurement in Inversion Layers on Silicon
James A. Cooper, Jr.(1.School of Electrical Engineering Purdue University)
[A-1-2]Hot Carrier Degradation Mechanism in Si nMOSFETs
T. Tsuchiya, T. Kobayashi, S. Nakajima(1.NTT Atsugi Electrical Communication Laboratories)
[A-1-3]Characterization and Performance Analysis of Masked LDD Transistor for CMOS VLSIs
Masaki Sato, Kuniyoshi Yoshikawa, Shigeru Atsumi, Seiichi Mori, Koji Makita, Akemi Omichi, Hiroshi Nozawa(1.Semiconductor Device Engineering Laboratory, TOSHIBA CORPORATION)
[A-1-4]A New Self-Aligned Contact Technology for LDD MOS Transistors
A. Shinohara, M. Fukumoto, G. Fuse, S. Odanaka, M. Sasago, T. Ohzone, T. Ishihara(1.Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.)
[A-1-5]Comparison of α-Particle Induced Charge Collection on MOS Capacitors Using a DC Tester
Phil OLDIGES, Tohru FURUYAMA(1.Semiconductor Device Engineering Lab. Toshiba Corp., 2.Dept. of Elect. Engineering Cornell University)
[A-1-6]Three Dimensional Leakage Current in Corrugated Capacitor Cells
Eiji TAKEDA, Kan TAKEUCHI, Atsushi HIRAIWA, Toru TOYABE, Hideo SUNAMI, Kiyoo ITOH(1.Central Research Laboratory, Hitachi Ltd.)
[A-1-7]Current Leakage Analysis of Folded Capacitor Cell (FCC) for Future Megabit DRAMs
T. HAMAMOTO, N. SHIGYO, K. HIEDA, M. WADA(1.VLSI Research Center Toshiba Corporation)
[A-1-8]A High S/N Design on Multilevel Storage Dynamic Memory
Y. Nakagome, M. Aoki, M. Horiguchi, S. Ikenaga, K. Shimohigashi(1.Central Research Laboratory, Hitachi, Ltd.)
[A-1-9]On-Chip Battery Back-Up Circuit for VLSI Static RAM's
Kazuhiro SAWADA, Takayasu SAKURAI, Tetsuya IIZUKA(1.Semiconductor Device Engineering Laboratory, Toshiba Corporation)
[A-1-10]An ECL Compatible 64Kb FIPOS/CMOS Static RAM
Yasuo Ohmori, Tatsuo Baba, Hirotoshi Sawada, Kouhei Ehara(1.NTT Atsugi Electrical Communication Laboratories)
[B-1-1]Enhanced Disordering of AlGaAs Superlattice and its Application to Fabrication of Index-Guided Multiquantum Well Lasers
Hisao Nakashima(1.Optoelectronics Joint Research Laboratory)
[B-1-2]A Novel Self-Aligned Laser with Small Astigmatism Grown by MO-CVD
Y. Mihashi, Y. Nagai, H. Matsubara, K. Ikeda(1.LSI Research and Development Lab., Mitsubishi Electric Corporation)
[B-1-3]Mode Properties of MOCVD Grown High Power GaAlAs Lasers
H. Nagasaka, M. Okajima, N. Shimada, Y. Iizuka, N. Motegi(1.Research & Development Center, Toshiba Corp., 2.Semiconductor Division, Toshiba Corp.)
[B-1-4]Lasing Characteristics of GaAs/AlGaAs Multilayer Composing Distributed Feedback Cavity for Surface-Emitting Laser
Y. Nomura, K. Shinozaki, K. Asakawa, M. Ishii(1.Optoelectronics Joint Research Laboratory)
[B-1-5]EBX and Mass-Transport Techniques for Phase-Shifted DFB Laser
Sekartedjo Koentjoro, Norikazu Eda, Kazuhito Furuya, Yasuharu Suematsu(1.Department of Physical Electronics Tokyo Institute of Technology)
[B-1-6]Monolithic Integration of an InGaAs PIN Photodiode, Two InGaAs Column Gate FETs and an InGaAsP Laser for Optical Regeneration
S. HATA, M. IKEDA, Y. NOGUCHI, S. KONDO(1.NTT Atsugi Electrical Communication Laboratory)
[B-1-7]GaAs-(AlGa)As Double-Heterostructure Coupled Waveguide Optical Modulator/Switch with Schottky Contact
Kunio TADA, Hideki HAYASHI, Masahiro TSUCHIYA, Hiroyuki SAKAKI(1.Department of Electronic Engineering, University of Tokyo, 2.The Institute of Industrial Science, University of Tokyo)
[B-1-8]Optical Directional Coupler for Narrow Spectral Linewidth Light
Yasushi MATSUI, Masato ISHINO, Toshihiro FUJITA, Hiroyuki SERIZAWA(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
[B-1-9]Electric Field Induced Absorption Changes in InGaAsP/InP Multi-Quantum Well
A. Ajisawa, K. Nishi, T. Yanase, M. Fujiwara, R. Lang(1.Opto-Electronics Research Laboratories, NEC Corporation)
[B-1-10]Efficient Far Infrared Emission from Electrically Excited Surface Plasmon in Modulation-Doped AlGaAs-GaAs Heterointerface
Yasuo Sambe, Nobuyuki Okisu, Keiichi Suehiro, Takeshi Kobayashi, Kazuo Fujisawa, Takashi Tomita, Takeshi Sakurai(1.Faculty of Engineering Science, Osaka University, 2.Faculty of Engineering, Osaka Industrial University, 3.VLSI Research Laboratories, Sharp Corporation)
[C-1-1]A New Thermal CVD Method to Prepare High Quality Amorphous Silicon
Hideki Matsumura, Hiroyuki Tachibana, Hisanori Ihara(1.Department of Physical Electronics, Hiroshima University)
[C-1-2]High Quality Hydrogenated Amorphous-Germanium Films Prepared by Photochemical Vapor Deposition
P. Sichanugrist, M. Konagai, K. Takahashi(1.Tokyo Institute of Technology, Department of Physical Electronics)
[C-1-3]Artificially-Designed P-Type Amorphous Semiconductor Produced from Boron-Doped a-Si: H/ Undoped a-Si1-xNx:H Superlattices
Seiichi Miyazaki, Naoki Murayama, Masataka Hirose(1.Department of Electrical Engineering, Hiroshima university)
[C-1-4]Anomalous Enhancement of Spectral Response of a-SiGe:H pin Solar Cell under Blue Bias Illumination
S. Terazono, K. Kawabata, M. Aiga, Y. Yukimoto(1.LSI R&D Laboratory, Mitsubishi Electric Corporation)
[C-1-5]A New Silicon Vidicon Target Using an Amorphous-Crystalline Silicon Heterojunction
Hidenori Mimura, Yoshinori Hatanaka(1.Graduate School of Electronic Science and Technology, Research Institute of Electronics, Shizuoka University)
[C-1-6]Abrikosov Vortex Memory with Novel Cell Structure
Kazunori MIYAHARA, Masashi MUKAIDA, Kohji HOHKAWA(1.NTT Atsugi Electrical Communication Laboratories)
[C-1-7]A Josephson Counter-Circuit with Two-Phase Power Supply
Hiroshi Nakagawa, Itaru Kurosawa, Susumu Takada, Hisao Hayakawa(1.Electrotechnical Laboratory)
[C-1-8]Novel Josephson Integrated Circuit Technology Based on Selective Trilayer Ion-Beam Etching Process
T. Yoshida, H. Tsuge(1.Microelectronics Research Laboratories, NEC Corporation)
[A-2-1]Recrystallization of SOI Structures by a 2-Dimensionally Scanned Pseudo-Line Electron Beam
Susumu Horita, Hiroshi Ishiwara(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
[A-2-2]Amplitude Modulated Pseudo-Line Electron Beam Recrystallization for Large Area SOI Growth
T. Hamasaki, T. Inoue, I. Higashinakagawa, T. Yoshii, M. Kashiwagi, H. Tango(1.VLSI Research Center, Toshiba Corporation)
[A-2-3]Crystal Orientations for Unseeded SOI Films Recrystallized by a mm Long CW Line-Source Electron Beam
H. HADA, S. SAITOH, H. OKABAYASHI(1.Microelectronics Research Laboratories, NEC Corporation)
[A-2-4]Orientation Controlled SOI by Line-Shaped Laser-Beam Seeded Lateral Epitaxy for CMOS Stacking
M. Ohkura, K. Kusukawa, H. Sunami, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-5]Effect of Grain Boundaries on the I-V Characteristics of P-Channel MOSFET/SOI
T. Nishimura, K. Sugahara, S. Kusunoki, Y. Akasaka(1.LSI Research and Development Laboratory Mitsubishi Electric Corporation)
[A-2-6]Fabrication of MOSFET's on Si/CaF2/Si Structures
Hiroshi Onoda, Teruo Katoh, Norio Hirashita, Masayoshi Sasaki(1.IC Division, OKI Electric Industry, Co., Ltd.)
[A-2-7]Homogeneous Recrystallization of Si Islands through Wafer by Dual Laser Beam lrradiation
K. YAMAZAKI, N. YOSHII, S. OGAWA, S. AKIYAMA, Y. TERUI(1.Advanced Devices Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
[A-3-1]Photo-Epitaxial Growth of HgTe and Related Materials
S J C Irvine, J B Mullin(1.Royal Signals and Radar Establishment)
[A-3-2]Laser MOCVD Crystal Growth in GaAs
Yoshinobu Aoyagi, Sohachi Iwai, Yusaburo Segawa, Atsutoshi Doi, Susumu Namba(1.The Institute of Physical and Chemical Research, 2.International Micro Technology Corp.)
[A-3-3]Laser-Assisted Chemical Vapor Deposition of Stoichiometric Boron Nitride
Shin Yokoyama, Yasuhiro Yamakage, Masataka Hirose(1.Department of Electrical Engineering, Hiroshima University)
[A-3-4]Influence of Small Amounts of Oxygen on Xenon Resonance Lamp Photo-CVD
Hidekazu OKUHIRA, Akira SHINTANI(1.Central Research Laboratory, Hitatchi, Ltd.)
[A-3-5]ArF Laser Enhanced Etching of Silicon
T. Fujii, R. Kawabata, H. Komiya, H. Shimizu(1.VLSI Research Laboratories, SHARP Corporation)
[A-3-6]ArF Excimer Laser-Enhanced Oxidation of Silicon in O2/NF3 Gas Mixture
Mizuho Morita, Seiichi Aritome, Masataka Hirose(1.Department of Electrical Engineering, Hiroshima University)
[A-3-7]SiO2 Photo-CVD Using Reactive Oxygen by Double Light Excitation
Masanori OKUYAMA, Kohji INOUE, Masanori MICHIMORI, Yoshihiro HAMAKAWA(1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)
[A-3-8]Laser Initiated Chemical Vapor Deposition of Tungsten Films on Silicon Dioxide
A. Shintani, S. Tsuzuku, E. Nishitani, M. Nakatani(1.Central Res. Lab. Hitachi, Ltd., 2.Production Engineering Res. Lab. Hitachi, Ltd.)
[A-3-9]Direct Writing of Highly Conductive MO Lines by Laser Induced CVD
Fumihiko Uesugi, Hiroyuki Yokoyama, Shunji Kishida(1.Opto-Electronics Research Laboratories, NEC Corporation)
[B-2-1]Super-Doped Structure
Masaki Ogawa, Toshio Baba, Takashi Mizutani(1.Fundamental Research Laboratories, NEC Corporation)
[B-2-2]Low-Pressure OMVPE of GaAs Using a Triethylgallium Source
K. Kimura, S. Takagishi, S. Horiguchi, K. Kamon, M. Mihara, M. Ishii(1.Optoelectronics Joint Research Laboratory)
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