1985 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1985Nippon Toshi Center, Tokyo, Japan
1985 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1985Nippon Toshi Center, Tokyo, Japan
[B-1-9]Electric Field Induced Absorption Changes in InGaAsP/InP Multi-Quantum Well
A. Ajisawa, K. Nishi, T. Yanase, M. Fujiwara, R. Lang(1.Opto-Electronics Research Laboratories, NEC Corporation)
