1986 International Conference on Solid State Devices and Materials
Aug 20 - Aug 22, 1986Tokyo Prince Hotel, Tokyo, Japan
1986 International Conference on Solid State Devices and Materials
Aug 20 - Aug 22, 1986Tokyo Prince Hotel, Tokyo, Japan
[B-3-1]1800V Non-Latch-Up Bipolar-Mode MOSFETs(IGBT) Fabricated by Silicon Wafer Direct Bonding
Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe Hiromichi Ohashi, Masaru Shimbo(1.Toshiba Research & Development Center)
