[P-0-1]Prospect of Quantum Heterostructure Materials and Devices
H. Sakaki(1.Institute of Industrial Science, University of Tokyo)
1986 International Conference on Solid State Devices and Materials
Aug 20 - Aug 22, 1986Tokyo Prince Hotel, Tokyo, Japan
You can search for presentations in this event.
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1986 International Conference on Solid State Devices and Materials
Aug 20 - Aug 22, 1986Tokyo Prince Hotel, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(209)
[P-0-2]SOR X-Ray Lithography
H. Betz(1.Fraunhofer-Institut fur Mikrostrukturtechnik (IMT))
[P-0-3]Nanometer-Scale Silicon MOSFETs
R. E. Howard, L. D. Jackel, P. M. Mankiewich, W. J. Skocpol(1.AT&T Bell Laboratories)
[A-1-1]A Statistical Analysis of Microlithography
Henry I. Smith(1.Massachusetts Institute of Technology)
[A-1-2]Theoretical Consideration on New Reflection Type X-Ray Lithography
Hideki Matsumura(1.Department of Physical Electronics, Hiroshima University)
[A-2-1]A New Mask-To-Wafer Alignment Technique for A-Quarter-Micron SR Lithography
Junji ITOH, Toshihiko KANAYAMA, Nobufumi ATODA(1.Electrotechnical Laboratory)
[A-2-2]Holographic Nanometer Alignment for a Wafer Stepper
Kazuhiro Yamashita, Noboru Nomura, Toyoki Takemoto(1.Basic Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
[A-2-3]Sub-0.1-μm Ion Projection Lithography
Gerhard Stengl, Hans Loschner, Julius J. Muray(1.IMS - Ion Microfabrication Systems GmbH, 2.SRI International)
[A-2-4]Plasmask: A Novel Plasma Developed Resist Based on Selective Silylation
B. ROLAND, F. COOPMANS(1.UCB N.V., 2.IMEC vzw.)
[A-3-1]Oxygen-Doped Si Epitaxial Films for Si Hetero- Bipolar Transistors
M. Tabe, M. Takahashi, Y. Sakakibara(1.NTT Electrical Communications Laboratories)
[A-3-2]The Orientation Dependence of Impurity Sticking on Si Molecular Beam Epitaxy
Naoto Matsuo, Yuichi Hirofuji(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
[A-3-3]Si/SrO/Si Heteroepitaxial Structure Formation by Molecular Beam Epitaxy
Yuichi Kado, Yoshinobu Arita(1.NTT Electrical Communications Laboratories)
[A-3-4]Low Pressure Silicon Epitaxy Using Si2H6
Fumitake MIENO, Yuji FURUMURA, Mamoru MAEDA(1.Process Engineering Dept. Semiconductors Group Fujitsu Ltd.)
[A-3-5]Low Temperature Low Pressure Silicon Epitaxial Growth and Its Application to Advanced Dielectric Isolation Technology
John O. Borland, Dennis N. Schmidt, Alan R. Stivers(1.Epi Applications Laboratory Applied Materials, Inc., 2.Silicon Device Development Westinghouse R&D Center, 3.Technology Development Intel Corporation)
[B-1-1]P-well/N-well Compatible CMOS Processing for ASIC Applications
Tadahiro KURODA, Hiroyuki AKIBA, Hiroaki SUZUKI, Takao AOKI(1.Integrated Circuit Division, TOSHIBA Corporation)
[B-1-2]Advanced OSELO Isolation with Shallow Grooves for Three-quarter Micron ULSIs
Toru KAGA, Yoshifumi KAWAMOTO, Shin-pei IIJIMA, Yoshimi SUDOH, Yoshio SAKAI(1.CENTRAL RESEARCH LABORATORY, HITACHI Ltd.)
[B-1-3]An Analog BIMOS Technology
F. Rausch, H. Lindeman, W. Josquin, D. de Lang, P. J. W. Jochems(1.Philips Bipolar IC Development)
[B-2-1]Small Geometry Device Physics and Technology
Chihiro Hamaguchi, Arata Hasegawa, Masayoshi Shirahata(1.Department of Electronic Engineering, Faculty of Engineering Osaka University)
[B-2-2]Submicron MOSFETs with S/D Diffusions on a Field Insulator
Hiroshi Inokawa, Toshio Kobayashi, Kazuhide Kiuchi(1.NTT Electrical Communications Laboratories)
[B-2-3]Influence of Thermal Diffusion on Submicron MOST's
B. Meinerzhagen, W. L. Engl(1.Institut fur Theoretische Elektrotechnik, RWTH Aachen)
[B-2-4]Electrical Characteristics of Submicron Poly Si MOSFET
Tohru Ueda, Hiroaki Shimizu(1.VLSI Develop. Labs. Sharp Corp.)
[B-2-5]PARAMOST - A New Parasitic Resistance Model for Deep Submicron MOS Transistors
Kazuo Yano, Masaaki Aoki, Toshiaki Masuhara(1.Central Research Laboratory, Hitachi Ltd.)
[B-3-1]1800V Non-Latch-Up Bipolar-Mode MOSFETs(IGBT) Fabricated by Silicon Wafer Direct Bonding
Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe Hiromichi Ohashi, Masaru Shimbo(1.Toshiba Research & Development Center)
[B-3-2]Swiching Characteristic of a High Voltage BMFET
G. Ferla, S. Musumeci G. Busatto, P. Spirito, G. Vitale(1.SGS Microelettronica, 2.University of Naples SGS Microelettronica Stradale Primosole)
[B-3-3]A New Injection Suppression Structure for Conductivity Modulated Power MOSFETs
Daisuke UEDA, Kazuyoshi KITAMURA, Hiromitsu TAKAGI, Gota KANO(1.Semiconductor Laboratory, Matsushita Electronics Corporation)
[B-3-4]High-Temperature Characteristics of CVD-Grown β-SiC p-n Junction Diodes
Akira Suzuki, Atsuko Uemoto, Mitsuhiro Shigeta, Katsuki Furukawa, Shigeo Nakajima(1.Central Research Laboratories, Engineering Center, Sharp Corporation)
[C-1-1]III-V Semiconductors on Si Substrates
Russ Fischer, H. Morkoc(1.University of Illinois at Urbana-Champaign Coordinated Science Laboratory)
[C-1-2]Initial Stage of Molecular Beam Epitaxial Growth of GaAs on (100) Si
H. TAKASUGI, T. UEDA, M. KAWABE Y. BANDO(1.Institute of Meterials Science, University of Tsukuba, 2.National Institute for Research in Inorganic Materials)
[C-2-1]Heteroepitaxy of GaAs on Si Grown by MOCVD and MBE
Masahiro Akiyama(1.Research Laboratory, Oki Electric Industry Co., Ltd.)
[C-2-2]GaAs/Ge Crystal Growth on Ta2O5-Coated Si Substrates
Satoshi Oku, Yukinobu Shinoda, Yoshiro Ohmachi(1.NTT Electrical Communications Laboratories)
[C-2-3]Heteroepitaxy of GaAs on Si with Intermediate Layers of Evaporated Ge and Recrystallized Ge-on-Insulator (GOI)
El-Hang Lee, M. Abdul Awal, Eric Y. Chan(1.AT&T Engineering Research Center)
[C-2-4]Effect of Substrate Orientation on the Photoluminescence of GaAs on Si
Y. Kajikawa, S. Ochi, N. Hayafuji, K. Mizuguchi, R. Hirano, T. Murotani(1.LSI R&D Laboratory, Mitsubishi Electric Corporation)
[C-3-1]GaAs and AlGaAs Surface Cleaning Using an ECR Radical Beam Gun
K. Asakawa(1.Optoelectronics Joint Research Laboratory)
[C-3-2]UV Cleaning Effect of GaAs Surface in NH3 Gas Prior to Photo CVD
N. Yoshida, K. Mizuguchi, T. Murotani, K. Fujikawa(1.LSI R&D Laboratory, Mitsubishi Electric Corporation)
[C-3-3]Formation of Buried Isolation Layer by Implanting Focused B Ion Beam in GaAs Multilayer Using FIBI-MBE System
Hiroshi Arimoto, Tetsuo Morita, Akira Takamori, Yasuo Bamba, Eizo Miyauchi, Hisao Hashimoto(1.Optoelectronics Joint Research Laboratory)
[C-3-4]Selective Double Diffusion of Zn and Si into GaAs Using Sputtered Si Masks
E. Omura, G. A. Vawter, X. S. Wu, L. A. Coldren, J. L. Merz(1.Department of Electrical and Computer Engineering University of California)
[C-3-5]Disorder Induced Gap State Model for Anomalous C-V Carrier Concentration Profiles at Epitaxially Grown Interfaces
Hideki Hasegawa, Eiji Ikeda, Hideo Ohno(1.Department of Electrical Engineering, Faculty of Engineering Hokkaido University)
[D-1-1]AlGaInP Visible Semiconductor Lasers Grown by Metalorganic Vapor Phase Epitaxy
Tohru Suzuki(1.Opto-electronics Research Laboratories, NEC Corporation)
[D-1-2]InGaAlP Transverse Mode Stabilized Visible Laser Diodes Fabricated by MOCVD Selective Growth
Masayuki Ishikawa, Yasuo Ohba, Yukio Watanabe Hiroko Nagasaka, Hideto Sugawara Motoyuki Yamamoto, Gen-ichi Hatakoshi(1.Research and Development Center, Toshiba Corporation)
[D-2-1]Intraband Relaxation Dynamics of Photo-Excited Carriers in GaAs and Related Compounds
C. L. Tang, F. W. Wise, M. J. Rosker(1.Cornell University)
[D-2-2]Optical Bistability in Semiconductor Laser Amplifiers:- Assessment of Switching Speed
H J Westlake, M J Adams, M J O'Mahony(1.British Telecom Research Laboratories)
[D-2-3]Optical Tristability Using a Twin-Stripe Laser Diode
Masanobu Watanabe, Hideo Itoh, Masami Saito, Seiji Mukai, Hiroyoshi Yajima, Shin-ichiro Uekusa(1.Electrotechnical Laboratory, 2.Meiji University)
[D-2-4]Proposal of Bipolar Transistor Carrier-Injected Optical Modulators and Switches
Kunio Tada, Yoshitaka Okada(1.Department of Electronic Engineering, The University of Tokyo)
[D-3-1]High-Power Single Mode Operation of Index-Guided Inner Stripe (I2S) Laser by MOCVD
N. Kaneno, T. Kadowaki, S. Hinata, T. Aoyagi, Y. Seiwa, Y. Mihashi, K. Ikeda, W. Susaki(1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)
[D-3-2]High Frequency Response Characteristics of DFB-DC-PBH LDs
Hiroyuki Nishimoto, Masayuki Yamaguchi, Ikuo Mito, Kohroh Kobayashi(1.Opto-Electronics Research Laboratories, NEC Corporation)
[D-3-3]Monolithic Integration of High-Power Buried Stripe (GaAl) As Laser with Laser with High Frequency Modulator MESFET Circuit
Ken Hamada, Noriyuki Yoshikawa, Hirokazu Shimizu, Tatsuo Otsuki, Akio Shimano, Kunio Itoh, Gota Kano, Iwao Teramoto(1.Semiconductor Laboratory Matsushita Electronics Corporation)
[D-3-4]OEIC Transmitter Fabricated by Planar Integration Process
H. Nobuhara, T. Sanada, M. Kuno, M. Makiuchi, T. Fujii, O. Wada(1.FUJITSU LABOLATORIES LTD.)
[D-3-5]A Novel 4-Mask InSb Infrared Staring Imaging Array
Ali Bahraman(1.Northrop Research & Technology Center)
[A-4-1]Laser Induced Gas-Surface Chemistry and Photoetching of Solids
T. J. Chuang(1.IBM Almaden Research Center)
[A-4-2]Excimer Laser Etching of Si and SiN
T. FUJII, R. KAWABATA, H. KOMIYA, H. SHIMIZU(1.VLSI DEVELOPMENT LABOLATORIES, SHARP CORPORATION)
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