1986 International Conference on Solid State Devices and Materials
Aug 20 - Aug 22, 1986Tokyo Prince Hotel, Tokyo, Japan
1986 International Conference on Solid State Devices and Materials
Aug 20 - Aug 22, 1986Tokyo Prince Hotel, Tokyo, Japan
[B-3-4]High-Temperature Characteristics of CVD-Grown β-SiC p-n Junction Diodes
Akira Suzuki, Atsuko Uemoto, Mitsuhiro Shigeta, Katsuki Furukawa, Shigeo Nakajima(1.Central Research Laboratories, Engineering Center, Sharp Corporation)
