1986 International Conference on Solid State Devices and Materials
Aug 20 - Aug 22, 1986Tokyo Prince Hotel, Tokyo, Japan
1986 International Conference on Solid State Devices and Materials
Aug 20 - Aug 22, 1986Tokyo Prince Hotel, Tokyo, Japan
[C-3-3]Formation of Buried Isolation Layer by Implanting Focused B Ion Beam in GaAs Multilayer Using FIBI-MBE System
Hiroshi Arimoto, Tetsuo Morita, Akira Takamori, Yasuo Bamba, Eizo Miyauchi, Hisao Hashimoto(1.Optoelectronics Joint Research Laboratory)
