1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
[A-1-2]A 5.4μm2 Sheath-Plate-Capacitor DRAM Cell with Self-Aligned Storage-Node Insulation
T. Kaga, Y. Kawamoto, T. Kure, Y. Nakagome, M. Aoki, T. Makino, H. Sunami(1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)
