[A-0-1]Quantum Mechanical and Non-Steady-State Transport Phenomena in Nanostructured Silicon Inversion Layers
D. A. Antoniadis(1.Massachusetts Institute of Technology)
1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
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1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(136)
[A-0-2]BiCMOS Process and Device Technology for High Speed VLSIs
Takahide Ikeda(1.Device Development Center, Hitachi Ltd.)
[A-1-1]SCC (Surrounded Capacitor Cell) Structure for DRAM
G. Fuse, K. Tateiwa, S. Odanaka, T. Yamada, I. Nakao, H. Shimoda, O. Shippou, M. Fukumoto, J. Yasui, Y. Naito, T. Ohzone(1.Matsushita Elec. Ind. Co. Ltd. Semiconductor Research Center)
[A-1-2]A 5.4μm2 Sheath-Plate-Capacitor DRAM Cell with Self-Aligned Storage-Node Insulation
T. Kaga, Y. Kawamoto, T. Kure, Y. Nakagome, M. Aoki, T. Makino, H. Sunami(1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)
[A-1-3]A 5.4μm2 Stacked Capacitor DRAM Cell with 0.6μm Quadruple-Polysilicon Gate Technology
S. Kimura, Y. Kawamoto, N. Hasegawa, A. Hiraiwa, M. Horiguchi, M. Aoki, T. Kisu, H. Sunami(1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)
[A-1-4]MeV-Boron Implanted Buried Barrier for Soft Error Reduction in Megabit DRAM
Y. Matsuda, K. Tsukamoto, M. Inuishi, M. Shimizu, M. Asakura, K. Fujishima, J. Komori, Y. Akasaka(1.LSI R&D Lab. Mitsubishi Electric Corp.)
[A-2-1]The Improvement of LDD MOSFET's Characteristics by the Oblique-Rotating Ion Implantation
T. Eimori, H. Ozaki, H. Oda, S. Ohsaki, J. Mitsuhashi, S. Satoh, T. Matsukawa(1.LSI R & D Laboratory, Mitsubishi Electric Corp.)
[A-2-2]Initial Stage Degradation Mechanism in Hot-Carrier Effects
Yasuo lgura, Kazunori Umeda, Eiji Takeda(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-3]Effects of Parasitic Resistance and Hot-Electron-Degraded Transconductance on Lower Submicron P and N-MOSFET Characteristics
I. Kamohara, T. Wada, H. Tango(1.VLSI Research Center,Toshiba Corp.)
[A-2-4]Alpha-Particle-Induced Source-Drain Penetration (ALPEN) Effects -A New Soft Error Phenomenon-
Digh Hisamoto, Tohru Toyabe, Eiji Takeda(1.Central Research Laboratory, Hitachi Ltd.)
[A-3-1]Improved Bipolar-Mode MOSFETs(IGBT) with Self-Aligning Technique and Wafer Bonding(SDB) -Why is the Bipolar-Mode MOSFET SOA Large?-
Akio NAKAGAWA, Yoshihiro YAMAGUCHI, Kiminori WATANABE(1.Toshiba Research & Development Center)
[A-3-2]An NPN Transistor Fabricated by Silicon Wafer Direct-Bonding
Masaki ATSUTA, Tsuneo OGURA, Akio NAKAGAWA, Hiromichi OHASHI(1.Toshiba Research and Development Center)
[A-3-3]Vertical-Type Amorphous-Silicon MOSFET IC's
Hiroyuki Okada, Yasutaka Uchida, Masakazu Arai, Shunri Oda, Masakiyo Matsumura(1.Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2.Faculty of Engineering, Takushoku University)
[A-3-4]Peripheral Drive Circuits for Poly-Si TFT LCD
J. OHWADA, M. TAKABATAKE, H. KAWAKAMI, Y. A. ONO, A. MIMURA, K. ONO, N. KONISHI, T. SUZUKI, AND K. MIYATA(1.Hitachi Research Laboratory, Hitachi, Ltd.)
[A-3-5]High Performance Superthin Film Transistor (SFT) with Twin Gates
Hisao HAYASHI, Michio NEGISHI, Takefumi OHSHIMA, Takashi NOGUCHI, Yuji HAYASHI, Toshikazu MAEKAWA, Takeshi MATSUSHITA(1.R & D Department, Semiconductor Group, SONY Corp.)
[A-3-6]6000V Gate Turn-Off Thyristor (GTO) with N-Buffer and New Anode Short Structure
Tsuneo Ogura, Mitsuhiko Kitagawa, Hiromichi Ohashi, Akio Nakagawa(1.Research and Development Center and Tamagawa Works, Toshiba Corp.)
[B-1-1]A New Thermostable Ohmic Contact to n-GaAs -n+-Si/n-GaAs Structure-
Tanemasa ASANO, Tsuyoshi FUKADA, Seijiro FURUKAWA, Hiroshi ISHIWARA(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
[B-1-2]Low-Resistance Non-Alloyed Contacts to n-GaAs Using InAs/Graded InGaAs/GaAs Structure
Takumi NITTONO, Hiroshi ITO, Osaake NAKAJIMA, Tadao ISHIBASHI(1.NTT Electrical Communications Laboratories)
[B-1-3]Analysis of Planar Channeling Effects on the Threshold Voltage Uniformity of GaAs MESFETs Using Stereographic Projection
Hitoshi MIKAMI, Naotaka UCHITOMI, Nobuyuki TOYODA(1.VLSI Research Center, Toshiba Corporation)
[B-1-4]Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam
Jin-Zhong YU, Tamio HARA, Takashi YOSHINAGA, Manabu HAMAGAKI, Yoshinobu AOYAGI, Susumu NAMBA(1.The Institute of Physical and Chemical Research (RIKEN), 2.Institute of Semiconductors, Chinese Academy of Sciences, 3.Central Research Laboratory, Tokyo Electron Limited)
[B-2-1]Photo-and Electroluminescence Investigation of Rare Earth Ions in III-V Semiconductors
Helmut Ennen(1.Fraunhofer-Institut fur Angewandte Festkorperphysik)
[B-2-2]1.54μm Emission from Er-Doped GaAs and InP Grown by Metalorganic Chemical Vapor Deposition
Kunihiko Uwai, Hiroshi Nakagome, Kenichiro Takahei(1.NTT Electrical Communications Laboratories)
[B-2-3]Avalanche Multiplication in Amorphous Selenium
K. Tsuji, Y. Takasaki, T. Hirai, J. Yamazaki, K. Tanioka(1.Central Research Laboratory, Hitachi Ltd., 2.NHK Science and Technical Research Laboratories)
[B-2-4]Highly Resistive InP Embedded InGaAsP/InP Lasers Entirely Grown by Hydride VPE
Yoshitake KATO, Kenichi KASAHARA, Shigeo SUGOU, Tomoo YANASE, Naoya HENMI(1.Opto-Electronics Res. Labs., NEC Corporation)
[B-3-1]Low Noise and Low Astigmatic Properties of GaAlAs Laser Diodes with ZnSe Layer Grown by Adduct-Source MOCVD
H. Iwano, Y. Tsunekawa, M. Shimada, H. Komatsu, T. Seki, Y. Yamazaki, T. Takamura, H. Ohshima(1.Research and Development Div., SEIKO EPSON CORPORATION)
[B-3-2]Extremely Low Threshold Current Density in (111)-Oriented GaAs/AlGaAs Quantum Well Lasers
Toshiro HAYAKAWA, Masafumi KONDO, Takahiro SUYAMA, Kosei TAKAHASHI, Saburo YAMAMOTO, Toshiki HIJIKATA(1.Central Research Laboratories, Sharp Corporation)
[B-3-3]Extremely Narrow Spectral Linewidth Oscillation of Low Threshold Current Integrated-Passive-Cavity Laser
Jun OHYA, Yasushi MATSUI, Masato ISHINO, Hisanao SATO, Hiroyuki SERIZAWA(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
[B-3-4]Gain-Switched Distributed Feedback Laser Suitable for Ultrafast Optical Trigger
Yong Tak Lee, Atsushi Shimizu, Inami Tanaka, Takeshi Kamiya(1.Department of Electronic Engineering, University of Tokyo)
[B-3-5]High Power Operation of InGaP/InAlP Transverse Mode Stabilized Laser Diodes
Masayuki ISHIKAWA, Kazuhiko ITAYA, Yukio WATANABE, Gen-ichi HATAKOSHI, Hideto SUGAWARA, Yasuo OHBA, Yutaka UEMATSU(1.Research and Development Center. Toshiba Corporation)
[B-4-1]Absolute Lattice Parameter Measurement of GaAs Crystals Using Monochromatic Synchrotron Radiation
K. Usuda, S. Yasuami, Y. Higashi, H. Kawata, M. Ando(1.Research and Development Center, Toshiba Corporation, 2.Photon Factory, National Laboratory for High Energy Physics)
[B-4-2]Observation of Nonradiative Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
Kazuo TSUBOUCHI, Yoshikazu AKUTSU, Nobuo MIKOSHIBA(1.Research Institute of Electrical Communication, Tohoku University)
[B-4-3]DX-Center-Like Traps in AlGsSb
Yu ZHU, Yoshikazu TAKEDA, Akio SASAKI(1.Department of Electrical Engineering, Kyoto University)
[B-5-1]Orientation Dependence of Electron Trap Incorporation in GaAs Grown by Gas Source Moleculer Beam Epitaxy
Kyozo KANAMOTO, Kozo KIMURA, Seishi HORIGUCHI, Makoto ISHII(1.Optoelectronics Joint Research Laboratory)
[B-5-2]A Model of the Surface State Distribution for AIN/GaAs System
Masashi MIZUTA, Shinji FUJIEDA, Yoshishige MATSUMOTO(1.Fundamental Research Laboratories, NEC Corporation)
[B-5-3]Piezoresistance Effect in n-Type and p-Type Al0.3 Ga0.7 As/GaAs Selectively Doped Heterostructure
T. Kato, H. Kano, M. Hashimoto, H. Sakaki, I. Igarashi(1.Toyota Central Research and Development Laboratories Inc., 2.Institute of Industrial Science, The University of Tokyo)
[B-6-1]Growth of GaAs Layers on (001) Si Substrates
S. Naritsuka, C. Nozaki, N. Sugiyama, Y. Nishikawa, S. Yasuami, Y. Kokubun(1.Research and Development Center, Toshiba Corporation)
[B-6-2]Low Temperature Growth of GaAs on Si by Migration Enhanced Molecular Beam Epitaxy
Shin Yokoyama, Dai Yui, Takashi Shiraishi, Mitsuo Kawabe(1.Institute of Materials Science, University of Tsukuba)
[B-6-3]The Growth of GaAs on Recrystallized Ge/SiO2/GaAs
T. Kimura, C. Yamagishi, T. Ueda, M. Akiyama(1.R&D Division, Oki Electric Industry Co., Ltd.)
[B-6-4]Heteroepitaxy of InP on (100)Si by Organometallic Vapor Phase Epitaxy
Naoto UCHIDA, Mitsuru SUGO, Akio YAMAMOTO, Masafumi YAMAGUCHI(1.NTT Electrical Communications Laboratories)
[B-7-1]Se Atomic Planar Doping to GaAs by MOCVD and Its Application to Two-Dimensional Electronic Devices
Yasufumi FUJIWARA, Yoshito FUKUMOTO, Takeshi KOBAYASHI, Yoshihiro HAMAKAWA(1.Faculty of Engineering Science, Osaka University)
[B-7-2]Electron-Beam Exposure Epitaxy (EBE-Epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures
Hee Chul LEE, Tanemasa ASANO, Hiroshi ISHIWARA, Seigo KANEMARU, Seijiro FURUKAWA(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
[B-7-3]Improvement in Conversion Efficiency of MOCVD GaAs Solar Cells using AlGaAs Buffer Layers
S. Ochi, N. Hayafuji, N. Ogasawara, M. Kato, K. Mitsui, K. Yamanaka, T. Murotani(1.LSI R&D Laboratory, Mitsubishi Electric Corp.)
[B-7-4]Nb/Compound Semiconductor Heterostructures Epitaxially Grown by Interrupted Electron Beam Deposition
Masayoshi TONOUCHI, Koichi HASHIMOTO, Yoshiyuki SAKAGUCHI, Sadamu KITA, Takeshi KOBAYASHI(1.Faculty of Engineering Science, Osaka University)
[C-1-1]The Characterization of P-MOS FET Fabricated on SOI with Controlled Crystal Orientation
K. Shirakawa, M. Maekawa, O. Yamazaki, H. Tsuji, M. Koba(1.Central Research Laboratories, SHARP Corporation)
[C-1-2]MOS-FETs Fabricated by SPE-SOI Technology
K. Kusukawa, M. Moniwa, E. Murakami, M. Miyao, T. Warabisako, Y. Wada(1.Central Research Laboratory, Hitachi Ltd.)
[C-1-3]Seed Shape Dependence of Si Solid Phase Epitaxy
Eiichi Murakami, Masahiro Moniwa, Kikuo Kusukawa, Masanobu Miyao, Terunori Warabisako, Yasuo Wada(1.Central Research Laboratory, Hitachi, Ltd.)
[C-1-4]SOI Recrystallization using a Multiply Separated Seed Structure
S. Kambayashi, T. Inoue, M. Kemmochi, I. Higashinakagawa, T. Yoshii(1.VLSI Research Center, Toshiba Corporation)
[C-1-5]Selective Growth of Nuclei on Amorphous Substrates
T. Yonehara, Y. Nishigaki, H. Mizutani, S. Kondoh, K. Yamagata, T. Ichikawa(1.Research Center, Canon Inc.)
[C-3-1]The Effect of Charge Build-up on Gate Oxide Breakdown during Dry Etching
Kazuyuki TSUNOKUNI, Kazuo NOJIRI, Sumi KUBOSHIMA, Kado HIROBE(1.Musashi Works, Hitachi, Ltd., 2.Hitachi Microcomputer Engneering, Ltd., 3.Kanagawa Works , Hitachi, Ltd.)
[C-3-2]Electron Spin Resonance Study of a New Positively Charged Defect in Device Oxides Damaged by Soft X-Rays
B. B. Triplett, T. Takahashi, K. Yokogawa, T. Sugano(1.Dept. of Electronic Engineering, University of Tokyo, 2.Intel Researcher in Residence, 3.Nippon Steel Corporation)
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