1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
[A-1-3]A 5.4μm2 Stacked Capacitor DRAM Cell with 0.6μm Quadruple-Polysilicon Gate Technology
S. Kimura, Y. Kawamoto, N. Hasegawa, A. Hiraiwa, M. Horiguchi, M. Aoki, T. Kisu, H. Sunami(1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)
