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1987 Conference on Solid State Devices and Materials
Aug 25
- Aug 27, 1987
Nippon Toshi Center, Tokyo, Japan
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1987 Conference on Solid State Devices and Materials
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1987 Conference on Solid State Devices and Materials
Aug 25
- Aug 27, 1987
Nippon Toshi Center, Tokyo, Japan
[A-2-1]
The Improvement of LDD MOSFET's Characteristics by the Oblique-Rotating Ion Implantation
T. Eimori, H. Ozaki, H. Oda, S. Ohsaki, J. Mitsuhashi, S. Satoh, T. Matsukawa(1.LSI R & D Laboratory, Mitsubishi Electric Corp.)
https://doi.org/10.7567/SSDM.1987.A-2-1
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