1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan

[A-2-3]Effects of Parasitic Resistance and Hot-Electron-Degraded Transconductance on Lower Submicron P and N-MOSFET Characteristics

I. Kamohara, T. Wada, H. Tango(1.VLSI Research Center,Toshiba Corp.)
https://doi.org/10.7567/SSDM.1987.A-2-3