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1987 Conference on Solid State Devices and Materials
Aug 25
- Aug 27, 1987
Nippon Toshi Center, Tokyo, Japan
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1987 Conference on Solid State Devices and Materials
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1987 Conference on Solid State Devices and Materials
Aug 25
- Aug 27, 1987
Nippon Toshi Center, Tokyo, Japan
[A-2-3]
Effects of Parasitic Resistance and Hot-Electron-Degraded Transconductance on Lower Submicron P and N-MOSFET Characteristics
I. Kamohara, T. Wada, H. Tango(1.VLSI Research Center,Toshiba Corp.)
https://doi.org/10.7567/SSDM.1987.A-2-3
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