1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
Back
International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan

[A-3-1]Improved Bipolar-Mode MOSFETs(IGBT) with Self-Aligning Technique and Wafer Bonding(SDB) -Why is the Bipolar-Mode MOSFET SOA Large?-

Akio NAKAGAWA, Yoshihiro YAMAGUCHI, Kiminori WATANABE(1.Toshiba Research & Development Center)
https://doi.org/10.7567/SSDM.1987.A-3-1
Download PDFDownload PDF
Back