1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan

[B-1-3]Analysis of Planar Channeling Effects on the Threshold Voltage Uniformity of GaAs MESFETs Using Stereographic Projection

Hitoshi MIKAMI, Naotaka UCHITOMI, Nobuyuki TOYODA(1.VLSI Research Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1987.B-1-3