1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
[B-1-4]Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam
Jin-Zhong YU, Tamio HARA, Takashi YOSHINAGA, Manabu HAMAGAKI, Yoshinobu AOYAGI, Susumu NAMBA(1.The Institute of Physical and Chemical Research (RIKEN), 2.Institute of Semiconductors, Chinese Academy of Sciences, 3.Central Research Laboratory, Tokyo Electron Limited)
