1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan

[B-3-1]Low Noise and Low Astigmatic Properties of GaAlAs Laser Diodes with ZnSe Layer Grown by Adduct-Source MOCVD

H. Iwano, Y. Tsunekawa, M. Shimada, H. Komatsu, T. Seki, Y. Yamazaki, T. Takamura, H. Ohshima(1.Research and Development Div., SEIKO EPSON CORPORATION)
https://doi.org/10.7567/SSDM.1987.B-3-1
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