1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
1987 Conference on Solid State Devices and Materials
Aug 25 - Aug 27, 1987Nippon Toshi Center, Tokyo, Japan
[B-5-3]Piezoresistance Effect in n-Type and p-Type Al0.3 Ga0.7 As/GaAs Selectively Doped Heterostructure
T. Kato, H. Kano, M. Hashimoto, H. Sakaki, I. Igarashi(1.Toyota Central Research and Development Laboratories Inc., 2.Institute of Industrial Science, The University of Tokyo)
