International Conference on Solid State Devices and Materials
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1987 Conference on Solid State Devices and Materials
Aug 25
- Aug 27, 1987
Nippon Toshi Center, Tokyo, Japan
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1987 Conference on Solid State Devices and Materials
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1987 Conference on Solid State Devices and Materials
Aug 25
- Aug 27, 1987
Nippon Toshi Center, Tokyo, Japan
[B-6-1]
Growth of GaAs Layers on (001) Si Substrates
S. Naritsuka, C. Nozaki, N. Sugiyama, Y. Nishikawa, S. Yasuami, Y. Kokubun(1.Research and Development Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1987.B-6-1
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