1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan

[A-2-3]500V Lateral Double Gate Bipolar-Mode MOSFET(DGIGBT) Dielectrically Isolated by Silicon Wafer Direct-Bonding(DISDB)

Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe(1.Toshiba Corporation)
https://doi.org/10.7567/SSDM.1988.A-2-3
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