1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan

[A-3-4]Novel Highly Conductive Polycrystalline Silicon Films Reducing Processing Temperature Down to 650℃

T. Kobayashi, S. Iijima, S. Aoki, A. Hiraiwa(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1988.A-3-4
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