1988 International Conference on Solid State Devices and Materials
Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan
1988 International Conference on Solid State Devices and Materials
Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan
[A-5-2]A High Integrity and Low Resistance Ti-Polycide Gate Using a Nitrotgen Ion Implanted Buffer Layer
K. Kobushi, S. Okada, S. Kameyama, K. Tsuji(1.Basic Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
