1988 International Conference on Solid State Devices and Materials
Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan
1988 International Conference on Solid State Devices and Materials
Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan
[A-9-5]Characteristics of Bipolar Transistors with Various Depth n+ Buried Layers Formed by High Energy Ion Implantation
A. Tamba, Y. Kobayashi, T. Suzuki, N. Natsuaki(1.Hitachi Research Laboratory, Hitachi Ltd., 2.Central Research Laboratory, Hitachi Ltd.)
