1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

Aug 24 - Aug 26, 1988Keio Plaza Hotel, Tokyo, Japan

[B-1-3]Experimental Evidence for Hole-Induced Interface State Generation under High Field Tunneling Current Stressing

Yoshio OZAWA, Masao IWASE, Akira TORIUMI(1.ULSI Research Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1988.B-1-3
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