1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan

[A-1-3]Reduction of Internal Stress by Compositional Gradient Layer Inserted between TiSi2 and Si

Tomonobu HATA, Masanobu Tsuchitani, Kenji Kamiya, Susumu Horita(1.Faculty of Technology, Kanazawa University)
https://doi.org/10.7567/SSDM.1989.A-1-3