International Conference on Solid State Devices and Materials
Past Programs
日本語
Help
1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
Back
Event List
1989 Conference on Solid State Devices and Materials
Detail
1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
[A-1-3]
Reduction of Internal Stress by Compositional Gradient Layer Inserted between TiSi2 and Si
Tomonobu HATA, Masanobu Tsuchitani, Kenji Kamiya, Susumu Horita(1.Faculty of Technology, Kanazawa University)
https://doi.org/10.7567/SSDM.1989.A-1-3
Download PDF
Back