International Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
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1989 Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
[A-2-2]
Electromigration Induced Abrupt Change of Electrical Resistance in Aluminum Interconnection
Shoso Shingubara, Hisashi Kaneko, Makoto Saitoh(1.Toshiba ULSI Research Center, Toshiba R&D Center, 2.Tokyo Institute of Technology)
https://doi.org/10.7567/SSDM.1989.A-2-2
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