1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
[A-2-3]Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing
Min-Lin CHENG, Armin KOHLHASE, Taketoshi SATO, Shin-ichi KOBAYASHI, Junichi MUROTA, Nobuo MIKOSHIBA(1.Research Institute of Electrical Communication, Tohoku University)
