International Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
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1989 Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
[A-2-4]
Blanket CVD-W Formed by SiH4 Reduction of WF6 on TiN for Planar Interconnection
M. Iwasaki, H. Itoh, T. Katayama, K. Tsukamoto, Y. Akasaka(1.LSI R&D Lab., Mitsubishi Electric Corp.)
https://doi.org/10.7567/SSDM.1989.A-2-4
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