1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan

[A-3-1]Effect of Atomic-Order Substrate Surface Planarization and O2 Partial Pressure Control during Growth on Crystalline Quality of Si/SrxBa1-xO/Si(111) Structure

Yuichi Kado, Yoshinobu Arita(1.NTT LSI Laboratories)
https://doi.org/10.7567/SSDM.1989.A-3-1