1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
Back
International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan

[A-3-3]Atomic Layer Growth of Silicon by Excimer Laser Induced Cryogenic CVD

T. TANAKA, T. FUKUDA, Y. NAGASAWA, S. MIYAZAKI, M. HIROSE(1.Department of Electrical Engineering, Hiroshima University)
https://doi.org/10.7567/SSDM.1989.A-3-3
Download PDFDownload PDF
Back