1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
[A-3-4]Mechanism of Si Laser Atomic Layer Epitaxy Using the Adsorption and Thermally-induced Reactions of Si2H6 on Si(100) 2x1
Y. Suda, D. Lubben, T. Motooka, J. E. Greene(1.R&D Center, Toshiba Corporation, 2.Coordinated Science Laboratory, University of Illinois)
