1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
[A-4-3]Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
Nobumasa SUZUKI, Toshiaki YOSHIKAWA, Kazuya MASU, Kazuo TSUBOUCHI, Nobuo MIKOSHIBA(1.Production Engineering Research Laboratory, Canon Inc., 2.Research Institute of Electrical Communication, Tohoku University)
