1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan

[A-5-4]Low Leakage SOIMOSFETs Fabricated Using a Wafer Bonding Method

M. Hashimoto, A. Ogasawara, M. Shimanoe, A. Nieda, H. Satoh, A. Yagi, T. Matsushita(1.Research & Development Div., Semiconductor Group Sony Corp)
https://doi.org/10.7567/SSDM.1989.A-5-4
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