International Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
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1989 Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
[A-6-1]
Effect of Trap-State on Field-Effect Mobility of MOSFET's Formed on Large Grain Poly-Si Films
Teruo KATOH, Norio HIRASHITA(1.Oki Electric Industry Co., Ltd, VLSI R&D Laboratory)
https://doi.org/10.7567/SSDM.1989.A-6-1
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