1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
Back
International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan

[A-6-4]Multilayered Well Formation for Sub-0.5 μm CMOS Devices Utilizing High Energy Ion Implantation

Kiyonori OHYU, Hidekazu GOTHO, Tadashi SUZUKI, Nobuyoshi NATSUAKI(1.Central Research Laboratory, Hitachi, Ltd.)
https://doi.org/10.7567/SSDM.1989.A-6-4
Download PDFDownload PDF
Back