1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
[A-7-3]Limit on Triode Region Drivability for a 0.1μm MOSFET, Predicted by Process/Device Simulation Including Parasitic Resistance
Itaru Kamohara, Shinichi Takagi, Tetsunori Wada, Kenji Natori(1.ULSI Research Center, Toshiba Corporation)
