1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
[A-7-5]High Drivability CMOSFETs with Asymmetrical Source-Drain (ASD) Structure for Low Supply Voltage ULSIs
A. Shimizu, T. Yamanaka, N. Hashimoto, T. Hashimoto, Y. Sakai, E. Takeda(1.Hitachi VLSI Engineering Corp., 2.Central Reseach Laboratory Hitachi Ltd., 3.Semiconductor Design & Development Center, Hitachi Ltd.)
