International Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
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1989 Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
[A-8-1]
A New Insight into the PN-Junction Characteristics of ULSI -The Time Dependent Junction Breakdown (TDJB)-
Hideyuki MATSUOKA, Digh HISAMOTO, Ryuichi IZAWA, Eiji TAKEDA(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1989.A-8-1
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