International Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
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1989 Conference on Solid State Devices and Materials
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1989 Conference on Solid State Devices and Materials
Aug 28
- Aug 30, 1989
Nippon Toshi Center, Tokyo, Japan
[A-8-3]
Capacitance-Enhanced Stacked-Capacitor with Engraved Storage Electrode for Deep Submicron DRAMs
T. Mine, S. Iijima, J. Yugami, K. Ohga, T. Morimoto(1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)
https://doi.org/10.7567/SSDM.1989.A-8-3
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